郑州4寸半绝缘碳化硅衬底_郑州4寸碳化硅衬底_郑州6寸碳化硅衬底_豪麦瑞供
t of n-type conductive SiC products ranging in wafer diameters up to 150mm. This material is manufactured upon a high-volume platform process that provides our customers the highest degree of material quality, supply assurance and economies of scale.
*C-faced polished wafers and 150mm LBPD substrates available upon request, lead times dependent on volume and requirements
PRODUCT SPECIFICATIONS
苏州豪麦瑞材料科技有限公司简介：
苏州豪麦瑞材料科技有限
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